Vacuum microelectronics devices based on the controlled electron motion in electric and magnetic fieldsNICOLAESCU, D; FILIP, V.EPJ. Applied physics (Print). 2000, Vol 10, Num 1, pp 33-42, issn 1286-0042Article

Emission statistics for Si and HfC/Si emitter arrays after gas exposureNICOLAESCU, D; NAGAO, M; SATO, T et al.International Vacuum Nanoelectronics Conference. 2004, pp 140-141, isbn 0-7803-8397-4, 1Vol, 2 p.Conference Paper

A new application of the irreversible processes thermodynamics: the optimum working mode of the solar cellGALDARARU, F; GALDARARU, M; NICOLAESCU, D et al.Revue roumaine des sciences techniques. Electrotechnique et énergétique. 1989, Vol 34, Num 1, pp 131-137, issn 0035-4066Article

Model of coherent electron field emission from semiconductors through nanometer-wide dielectric coveringsFILIP, V; NICOLAESCU, D; WONG, H et al.International Semiconductor Conference. 2004, pp 77-80, isbn 0-7803-8499-7, 4 p.Conference Paper

Electron field emission from semiconductors through oxide layers : possible transport effectsFILIP, V; NICOLAESCU, D; OKUYAMA, F et al.Applied surface science. 1999, Vol 146, Num 1-4, pp 347-356, issn 0169-4332Conference Paper

Cone- and wedge-gated field emitter diode and microtriode modelingNICOLAESCU, D.Applied surface science. 1994, Vol 76-77, Num 1-4, pp 47-57, issn 0169-4332Conference Paper

Definition of curve fitting parameter to study tunneling and trapping of electrons in Si/ultra-thin SiO₂/metal structuresFILIP, V; HEI WONG; NICOLAESCU, D et al.Microelectronics and reliability. 2006, Vol 46, Num 7, pp 1027-1034, issn 0026-2714, 8 p.Article

A conceptual design for a microelectronic ionization vacuum gaugeNICOLAESCU, D; FILIP, V; OKUYAMA, F et al.Applied surface science. 1998, Vol 126, Num 3-4, pp 292-302, issn 0169-4332Article

A double-layer current conduction model for high-κ gate dielectric materials with interfacial oxide or silicate layerFILIP, V; WONG, H; SEN, B et al.Microelectronic engineering. 2006, Vol 83, Num 10, pp 1950-1956, issn 0167-9317, 7 p.Article

Ring-shaped images as a result of non-uniform field emission from capped carbon nanotubesFILIP, L. D; NICOLAESCU, D; KANEMARU, S et al.International Vacuum Nanoelectronics Conference. 2004, pp 40-41, isbn 0-7803-8397-4, 1Vol, 2 p.Conference Paper

Field emission properties of silicon carbide and diamond-like carbon (DLC) films made by chemical vapour deposition techniquesKLEPS, I; NICOLAESCU, D; STAMATIN, I et al.Applied surface science. 1999, Vol 146, Num 1-4, pp 152-157, issn 0169-4332Conference Paper

Modeling of a pressure sensor based on an array of wedge emittersMARQUES, M. I; SERENA, P. A; NICOLAESCU, D et al.Applied surface science. 1999, Vol 146, Num 1-4, pp 239-244, issn 0169-4332Conference Paper

Investigation of porous silicon morphology for electron emission applicationsKLEPS, I; NICOLAESCU, D; GARCIA, N et al.Ultramicroscopy. 1998, Vol 73, Num 1-4, pp 237-245, issn 0304-3991Conference Paper

Modelling of a magnetic sensor based on vacuum field emissionNICOLAESCU, D; FILIP, V.Applied surface science. 1996, Vol 94-95, pp 87-93, issn 0169-4332Conference Paper

Modeling of the field emitter triode (FET) as a displacement/pressure sensorNICOLAESCU, D.Applied surface science. 1995, Vol 87-88, pp 61-68, issn 0169-4332Conference Paper

The far to equilibrium time evolution of the ozone layer : steady-state and critical behaviourCALDARARU, F; PATRASCU, S; CALDARARU, M et al.Atmospheric environment (1994). 1999, Vol 33, Num 26, pp 4243-4254, issn 1352-2310Article

Modeling of a miniaturized mass spectrometer with field emission electron sourceNICOLAESCU, D; FILIP, V; ITOH, J et al.Applied surface science. 1999, Vol 146, Num 1-4, pp 217-223, issn 0169-4332Conference Paper

Electron motion and confinement in the orbitip vacuum gauge. II. Modelling resultsNICOLAESCU, D; FILIP, V; OKUYAMA, F et al.Ultramicroscopy. 1999, Vol 79, Num 1-4, pp 167-174, issn 0304-3991Conference Paper

Porous silicon field emitters for display applicationsKLEPS, I; NICOLAESCU, D; LUNGU, C et al.Applied surface science. 1997, Vol 111, pp 228-232, issn 0169-4332Conference Paper

Physical basis for applying the Fowler-Nordheim J-E relationship to experimental I-V dataNICOLAESCU, D.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 2, pp 392-395, issn 1071-1023Conference Paper

Field electron emission through and from two-dimensional electron gasFILIP, V; NICOLAESCU, D; WONG, H et al.International Vacuum Nanoelectronics Conference. 2004, pp 110-111, isbn 0-7803-8397-4, 1Vol, 2 p.Conference Paper

Modeling the electron field emission from carbon nanotube filmsFILIP, V; NICOLAESCU, D; TANEMURA, M et al.Ultramicroscopy. 2001, Vol 89, Num 1-3, pp 39-49, issn 0304-3991Conference Paper

Electrons motion and confinement in the orbitip vacuum gauge. I. TheoryFILIP, V; NICOLAESCU, D; OKUYAMA, F et al.Ultramicroscopy. 1999, Vol 79, Num 1-4, pp 159-166, issn 0304-3991Conference Paper

Study of the inverted-magnetron cold emission microelectronic vacuum gaugeNICOLAESCU, D; FILIP, V; OKUYAMA, F et al.Ultramicroscopy. 1998, Vol 73, Num 1-4, pp 129-137, issn 0304-3991Conference Paper

Analysis of microwave generation by field emitted electrons moving in crossed electric and magnetic fieldsFILIP, V; NICOLAESCU, D; PLAVITU, C. N et al.Applied surface science. 1997, Vol 111, pp 185-193, issn 0169-4332Conference Paper